| PART |
Description |
Maker |
| TC58128FT |
128M-Bit CMOS NAND EPROM
|
Toshiba Semiconductor
|
| TH58NS100DC |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 - GBIT (128M X 8 BITS) CMOS NAND E2PROM ( 128M BYTE SmartMediaTM )
|
Toshiba Semiconductor
|
| TH58NS100DC |
1-GBIT (128M x 8 BITS) CMOS NAND E PROM (128M BYTE SmartMedia )
|
TOSHIBA
|
| TC58V64AFTI |
64M-Bit CMOS NAND EPROM
|
Toshiba Semiconductor
|
| K5P2880YCM |
Multi-Chip Package MEMORY 128M Bit 16Mx8 Nand Flash Memory / 8M Bit 1Mx8/512Kx16 Full CMOS SRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| TC58NVG0S3AFT05 |
1 GBIT (128M × 8 BITS) CMOS NAND EEPROM
|
Toshiba.
Toshiba Semiconductor
|
| TH58100FT |
1-GBIT (128M x 8 BITS) CMOS NAND E2PROM
|
TOSHIBA
|
| TC58256FTI |
CMOS NAND EPROM
|
Toshiba
|
| MX23J12840TI-50G MX23J12840 MX23J12840TC-50 MX23J1 |
128M-BIT NAND INTERFACE XtraROMTM
|
MCNIX[Macronix International]
|
| K9K1G08U0M-YIB0 K9K1G08U0M-YCB0 |
128M x 8 Bit NAND Flash Memory
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K9F1G08R0A K9K2G08U1A K9F1G08U0A |
128M x 8 Bit / 256M x 8 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
